Epitaxial structures GaAlAs for LEDs

Epitaxial heterostructures AlGaAs/GaAs for LEDs  are grown by method of liquid-phase epitaxy on GaAs substrates. They are used for fabrication of chips for the LEDs of red and infrared range of wavelengths in character indicators and optron keys.

CHARACTERISTICS OF CRYSTAL WAFERS AlGaAs FOR LEDs 
IN THE RED RANGE OF WAVELENGTHS

 Type  Material structure / substrate *  λp, 5nm Candlepower,
mcd, at 20m
Reverse voltage
Vr min, , at
Ir = 10μ 
 Response time, ns 
 min  type τr τf
  49  AlGaAs(SH)/p-GaAs  650-665  5  7  8  60  50
  125  AlGaAs(DH)/n-GaAs  650-665  9  12  8  40  30
  125S  AlGaAs(DH)/n-GaAs  650-665  2,5  4  8  40  30
  129  AlGaAs(DH)/n-GaAs  650-665  18  25  8  50  35
  131  AlGaAs(DH)/p-GaAs  650-665  12  15  8  40  30
  140  AlGaAs(DH)/p-GaAs  650-665  20  30  5  50  35
*Notes: SH - heterostructure, DH - double heterostructure, n upper side of  n-type, p upper side of p-type

CHARACTERISTICS OF CRYSTAL WAFERS AlGaAs FOR LEDs 
IN THE INFRARED RANGE OF WAVELENGTHS

 Type  Material structure / substrate *  λp, 5nm Candlepower,
mcd, at 20m
Reverse voltage
Vr min, , at 
Ir = 10μ 
 Response time, ns 
 min  type τr τf
  20  AlGaAs(SH)/p-GaAs  800-860  0,8  1,4  8  60  50
  131L  AlGaAs(DH)/n-GaAs  680-790  0,8  1,4  8  40  30
  136  AlGaAs(DH)/n-GaAs  850-880  3  4  8  40  30
 4  5  8  25  20
 2  3  8  25  20
  140  AlGaAs(DH)/n-GaAs  720-740  2,5 3,5  8  40  30
  140L  AlGaAs(DH)/p-GaAs  800-870  3 4  8  40  30
 4  5  8  40  30
  141  AlGaAs(DH)/p-GaAs   900-940  2,5 3,5  8  300  300
 *Notes: SH - heterostructure, DH - double heterostructure, n upper side of  n-type, p upper side of p-type