Substrates of monocrystalline GaAs

Characteristics of GaAs substrates:
 - production method - method by Chokhralski
   with liquid encapsulation of the melt;
- dislocation density not less than 5·104cm-2;
- carrier concentration 1·1016 - 3·1018cm-3;
- dopants  Te, Zn;
- diameter 2;3 in.;
- crystallographic direction (100),(111);
- thickness  350 – 650 µ;
- surface treatment – one- or two-sided polishing.